Three-dimensional memory device having ring-shaped etch-stop patterns interposed between lower and upper layer stacks
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United States of America Patent
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Jan 16, 2018
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app pub date -
Mar 22, 2016
filing date -
Oct 15, 2015
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Abstract
A semiconductor device includes a first stack including a plurality of alternating layers of first interlayer insulating layers and first conductive patterns; a second stack including a plurality of alternating layers of second conductive patterns and second interlayer insulating layers, the second stack being positioned above the first stack; a plurality of pillar-structures each pillar structure passing through the first and second stacks; and a ring pattern layer disposed between the first and second stacks, the ring pattern layer comprising a plurality of ring patterns, each ring pattern surrounding each pillar-structure.
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