Memory structure and a method for forming the same
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United States of America Patent
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Jan 16, 2018
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app pub date -
Jan 20, 2017
filing date -
Jan 20, 2017
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Abstract
A semiconductor structure includes a SRAM cell having transistors defined by fins and metal gate stack structures. A transistor and a corresponding pick up cell are disposed in an extension direction of the fins. The transistor and the corresponding pick up cell have metal gate stack structures of the same type.
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