Fabrication of vertical doped fins for complementary metal oxide semiconductor field effect transistors
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United States of America Patent
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Jan 16, 2018
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app pub date -
Jun 30, 2016
filing date -
Jun 30, 2016
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Abstract
A method of forming a fin field effect transistor (finFET) with a doped substrate region, including forming a plurality of vertical fins on a substrate, forming a first dopant source on one or more of the plurality of vertical fins, wherein the first dopant source is not formed on at least one vertical fin, forming a second dopant source on the at least one vertical fin that does not have a first dopant source formed thereon, and heat treating the plurality of vertical fins on the substrate, the first dopant source, and the second dopant source, wherein the heat treatment is sufficient to cause a first dopant from the first dopant source to diffuse into at least a first portion of the substrate, and a second dopant from the second dopant source to diffuse into at least a second portion of the substrate.
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