Semiconductor device

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United States of America Patent

PATENT NO 9871036
SERIAL NO

14209384

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Abstract

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A semiconductor chip includes a first circuit and a second circuit having different reference potentials. A first potential which is a reference potential of the first circuit is applied to the semiconductor chip through any of plural lead terminals, and a second potential which is a reference potential of the second circuit is applied to the semiconductor chip through any of plural lead terminals. A substrate of the semiconductor chip has a structure in which a buried insulating layer and a semiconductor layer of a first conductivity type are laminated on a semiconductor substrate such as a SOI substrate. A fixed potential is applied to the semiconductor substrate through a die pad and a lead terminal for a substrate potential. The fixed potential is applied to the semiconductor chip through a different route from the reference potential of the first circuit and the reference potential of the second circuit.

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Patent Owner(s)

Patent OwnerAddress
RENESAS ELECTRONICS CORPORATIONTOKYO JAPAN

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Akiyama, Yutaka Kanagawa, JP 51 835
Nakashiba, Yasutaka Kanagawa, JP 341 1961

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