Semiconductor device with metal silicide blocking region and method of manufacturing the same
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United States of America Patent
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Jan 16, 2018
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app pub date -
Dec 31, 2013
filing date -
Dec 31, 2013
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Abstract
Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a gate stack on a semiconductor substrate. In some embodiments, the semiconductor device further includes a semiconductor element, such as for example, a resistor, on the semiconductor substrate. The semiconductor device includes a metal silicide layer on at least one of the gate stack, the source region, and the drain region. The semiconductor device also includes a blocking region in a portion of the semiconductor element. In some embodiments, the blocking region includes first dopants and second dopants with an atomic radius smaller than that of the first dopants.
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