Plasma protection diode for a HEMT device
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United States of America Patent
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Jan 16, 2018
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N/A
app pub date -
Nov 21, 2016
filing date -
Mar 13, 2012
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Abstract
A silicon substrate having a III-V compound layer disposed thereon is provided. A diode is formed in the silicon substrate through an ion implantation process. The diode is formed proximate to an interface between the silicon substrate and the III-V compound layer. An opening is etched through the III-V compound layer to expose the diode. The opening is filled with a conductive material. Thereby, a via is formed that is coupled to the diode. A High Electron Mobility Transistor (HEMT) device is formed at least partially in the III-V compound layer.
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