THROUGH SILICON VIA SHARING IN A 3D INTEGRATED CIRCUIT
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Jul 14, 2016
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Jul 14, 2016
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Abstract
The present disclosure generally relates to semiconductor structures and, more particularly, to intelligent through silicon via sharing in 3D-IC integrated structures and methods of manufacture. The structure includes: a plurality of stacked dies each containing at least one macro device; and a layer structure positioned between the plurality of stacked dies which comprises a control structured to route signals between the at least one macro device of a first stacked die and the at least one macro device of a second stacked die of the plurality of stacked dies.
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