Formation of copper layer structure with self anneal strain improvement

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United States of America Patent

PATENT NO 9870995
SERIAL NO

14743926

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A copper layer structure includes a first copper layer, a second copper layer and a carbon-rich copper layer. The second copper layer is disposed over the first copper layer. The carbon-rich copper layer is sandwiched between the first copper layer and the second copper layer. A carbon concentration of the carbon-rich copper layer is greater than a carbon concentration of the first copper layer and a carbon concentration of the second copper layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Hung-Hsu Tainan, TW 38 54
Hung, Chi-Cheng Tainan, TW 85 657
Jangjian, Shiu-Ko Tainan, TW 172 1310
Nian, Jun-Nan Tainan, TW 24 17
Wang, Yu-Sheng Tainan, TW 80 546

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