Semiconductor device and method for fabricating the same
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United States of America Patent
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Jan 16, 2018
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app pub date -
Sep 17, 2014
filing date -
Sep 17, 2014
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Abstract
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming an ultra low-k (ULK) dielectric layer on the substrate; forming a hard mask on the ULK dielectric layer; forming an opening in the hard mask and the ULK dielectric layer; forming a conductive layer in the opening and on the hard mask; planarizing the conductive layer; and removing the hard mask to expose the ULK dielectric layer so that the top surface of the ULK dielectric layer is lower than the top surface of the conductive layer.
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