Method of producing a semiconductor device with through-substrate via covered by a solder ball
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United States of America Patent
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Jan 16, 2018
Grant Date -
Dec 21, 2017
app pub date -
Aug 30, 2017
filing date -
Nov 23, 2011
priority date (Note) -
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Abstract
A semiconductor substrate is provided with an annular cavity extending from a front side of the substrate to an opposite rear side. A metallization is applied in the annular cavity, thereby forming a through-substrate via and leaving an opening of the annular cavity at the front side. A solder ball is placed above the opening and a reflow of the solder ball is effected, thereby forming a void of the through-substrate via, the void being covered by the solder ball.
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