Forming CMOSFET structures with different contact liners
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United States of America Patent
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Jan 16, 2018
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N/A
app pub date -
Oct 17, 2016
filing date -
Aug 19, 2015
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Abstract
A method of making a semiconductor device includes forming a first trench contact over a first source/drain region of a first transistor; forming a second trench contact over a second source/drain region of a second transistor; depositing a first liner material within the first trench contact; and depositing a second liner material within the second trench contact; wherein the first liner material and the second liner material include different materials.
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