Vertical fin field effect transistor (V-FinFET), semiconductor device having V-FinFET and method of fabricating V-FinFET
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United States of America Patent
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Jan 16, 2018
Issued Date -
N/A
app pub date -
Oct 11, 2016
filing date -
Jun 16, 2016
priority date (Note) -
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Abstract
A vertical fin field effect transistor (V-FinFET) is provided as follows. A substrate has a lower source/drain (S/D). A fin structure extends vertically from an upper surface of the lower S/D. The fin structure includes a sidewall having an upper sidewall portion, a lower sidewall portion and a center sidewall portion positioned therebetween. An upper S/D is disposed on an upper surface of the fin structure. An upper spacer is disposed on the upper sidewall portion. A lower spacer is disposed on the lower sidewall portion. A stacked structure including a gate oxide layer and a first gate electrode is disposed on an upper surface of the lower spacer, the center sidewall portion and a lower surface of the upper spacer. A second gate electrode is disposed on the first gate electrode.
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