Formation method of semiconductor device structure
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United States of America Patent
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Jan 16, 2018
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app pub date -
Mar 13, 2017
filing date -
Dec 30, 2013
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Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a gate stack over a semiconductor substrate and forming a dummy shielding layer over the semiconductor substrate and the gate stack. The method also includes forming source and drain features near the gate stack after the dummy shielding layer is formed. The method further includes removing the dummy shielding layer after the source and drain features are formed such that substantially no dummy shielding layer remains on the source and drain features.
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