Simultaneous formation of source/drain openings with different profiles
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United States of America Patent
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Jan 16, 2018
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N/A
app pub date -
Feb 2, 2016
filing date -
Oct 11, 2013
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Abstract
A method includes forming a first gate stack and a second gate stack over a first portion and a second portion, respectively, of a semiconductor substrate, masking the first portion of the semiconductor substrate, and with the first portion of the semiconductor substrate being masked, implanting the second portion of the semiconductor substrate with an etch-tuning element. The first portion and the second portion of the semiconductor substrate are etched simultaneously to form a first opening and a second opening, respectively, in the semiconductor substrate. The method further includes epitaxially growing a first semiconductor region in the first opening, and epitaxially growing a second semiconductor region in the second opening.
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