Formation of VFET and finFET
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United States of America Patent
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Jan 16, 2018
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app pub date -
Feb 7, 2017
filing date -
Feb 7, 2017
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Abstract
An embodiment may include a method of forming a semiconductor device. The method may include forming a first fin in a VFET region, and a second fin in a finFET region, having a first and second hard cap respectively. The method may include removing the second hard cap. The method may include depositing a gate electrode and a gate dielectric. The method may include removing the gate metal and gate dielectric above the first hard cap in the VFET region, exposing a vertical surface of the first hard cap. The method may include forming a protective spacer adjacent to the vertical surface of the first hard cap that is thicker than the gate dielectric. The method may include forming gates in the VFET and finFET regions. The method may include removing the protective spacer and the first hard cap. The method may include forming a source/drain on the first fin.
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