Contact process and contact structure for semiconductor device
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United States of America Patent
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Jan 16, 2018
Grant Date -
Jul 21, 2016
app pub date -
Jan 16, 2015
filing date -
Jan 16, 2015
priority date (Note) -
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Abstract
A contact process for a semiconductor device is described. A substrate having a doped region and a dielectric layer over the doped region is provided. A contact hole is formed through the dielectric layer and exposing the doped region. An insulating liner layer is formed a in the contact hole. A portion of the insulating liner layer at a bottom of the contact hole is etch-removed and over-etching is performed. A conductive epitaxial layer is formed from the doped region in the contact hole, and then the contact hole is filled with a conductive material.
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