Method of forming mandrel and non-mandrel metal lines having variable widths
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United States of America Patent
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Jan 16, 2018
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app pub date -
Jan 19, 2017
filing date -
Jan 19, 2017
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Abstract
A method includes providing a semiconductor structure having a silicon mandrel layer, a hardmask stack and a dielectric layer. A 1st portion and a 2nd portion of the mandrel layer are doped with a 1st concentration and a 2nd greater concentration of dopant respectively. 1st and 2nd mandrels are patterned into the 1st and 2nd portions of the mandrel layer respectively. The 1st and 2nd mandrels are oxidized in the same thermal oxidation process to form 1st oxidation spacers on sidewalls of the 1st mandrels and 2nd oxidation spacers on sidewalls of the 2nd mandrels. The 2nd oxidation spacers have a thickness that is greater than a thickness of the 1st oxidation spacers. The 1st and 2nd oxidation spacers are utilized to form 1st and 2nd metal lines respectively in the dielectric layer. The 1st and 2nd metal lines have a different thickness.
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