Methods of forming nanosheets on lattice mismatched substrates
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United States of America Patent
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Jan 16, 2018
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app pub date -
Mar 10, 2016
filing date -
Aug 3, 2015
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Abstract
Methods of forming nanosheets for a semiconductor device are provided including providing a silicon on insulator (SOI) handle wafer, the SOT handle wafer including a silicon layer and a dielectric layer on the silicon layer; providing a first donor wafer; bonding the SOI handle wafer and the first donor wafer together to provide a bonded structure; debonding the bonded structure to provide an intermediate wafer including a plurality of silicon or non-silicon nanosheets and a plurality of dielectric layers alternately stacked; and bonding the intermediate wafer to a second donor wafer to provide a final wafer including a plurality of silicon or non-silicon layers and a plurality of dielectric layers alternately stacked, wherein the final wafer includes at least one more pair of silicon or non-silicon and dielectric layers than the intermediate wafer.
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