Semiconductor element producing method by flattening protective tape
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United States of America Patent
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Jan 16, 2018
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app pub date -
Oct 9, 2014
filing date -
Sep 7, 2012
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Abstract
A semiconductor element producing method is disclosed. In the method, a surface protective tape including a base layer and an adhesive layer (including an intermediate layer) is attached to the front surface of a wafer that has unevenness caused by a polyimide passivation. The wafer is placed on a stage, with the surface protective tape facing the stage. The surface protective tape is heated while being drawn to the stage to flatten the surface of the surface protective tape. A grinding process is performed on the rear surface of the wafer to reduce the thickness of the wafer. A rear surface element structure is formed on the rear surface of the wafer, and the wafer is diced into chips.
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