Quantum doping method and use in fabrication of nanoscale electronic devices
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United States of America Patent
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Jan 16, 2018
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Aug 12, 2013
filing date -
Aug 15, 2012
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Abstract
A novel doping technology for semiconductor wafers has been developed, referred to as a “quantum doping” process that permits the deposition of only a fixed, controlled number of atoms in the form of a monolayer in a substitutional condition where only unterminated surface bonds react with the dopant, thus depositing only a number of atoms equal to the atomic surface density of the substrate material. This technique results in providing a “quantized” set of possible dopant concentration values that depend only on the additional number of layers of substrate material formed over the single layer of dopant atoms.
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