Diffusion agent composition, method of forming impurity diffusion layer, and solar cell
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United States of America Patent
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Jan 16, 2018
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Apr 12, 2011
filing date -
May 17, 2010
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Abstract
A diffusion agent composition used in forming an impurity diffusion agent layer on a semiconductor substrate, and containing an impurity diffusion component, a silicon compound, and a solvent containing a solvent having a boiling point of 100° C. or less, a solvent having a boiling point of 120-180° C., and a solvent having a boiling point of 300° C.
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