Semiconductor device and method of manufacturing the semiconductor device
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United States of America Patent
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Jan 16, 2018
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app pub date -
Aug 25, 2016
filing date -
Sep 4, 2014
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Abstract
A semiconductor device that includes a p-type region formed selectively along one principle surfaces of an n-type drift layer and having a resistance that is lower than that of the drift layer, and in which, when a depth R at which a vacancy-oxygen complex defect region is provided in the drift layer with a thickness t from a surface of a pn junction being a boundary of the p-type region in a thickness direction of the drift layer from a back surface of a semiconductor substrate, resistivity of the drift layer is ρ, and width W of a depletion layer extending in the drift layer from the pn junction with a reverse bias voltage V to the pn junction is represented as W=0.54×√/(ρ×V), the vacancy-oxygen complex defect region is provided at the depth R represented by 0
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