Growing III-V compound semiconductors from trenches filled with intermediate layers
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United States of America Patent
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Jan 16, 2018
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app pub date -
Oct 29, 2015
filing date -
Nov 17, 2009
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Abstract
A method of forming an integrated circuit structure includes forming an insulation layer over at least a portion of a substrate; forming a plurality of semiconductor pillars over a top surface of the insulation layer. The plurality of semiconductor pillars is horizontally spaced apart by portions of the insulation layer. The plurality of semiconductor pillars is allocated in a periodic pattern. The method further includes epitaxially growing a III-V compound semiconductor film from top surfaces and sidewalls of the semiconductor pillars.
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