Cobalt etch back

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United States of America Patent

PATENT NO 9870899
SERIAL NO

14749285

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Abstract

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Methods of etching cobalt on substrates are provided. Some methods involve exposing the substrate to a boron-containing halide gas and an additive, and exposing the substrate to an activation gas and a plasma. Additives improve selectively depositing a thicker layer of a boron-containing halide material on a surface of a mask than on a surface of a metal. Additives include H2, CH4, CF4, NF3, and Cl2. Boron-containing halide gases include BCl3, BBr3, BF3, and BI3. Exposures may be performed in two or more cycles, with variations in durations and/or bias power for each exposure in the two or more cycles.

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Patent Owner(s)

Patent OwnerAddress
LAM RESEARCH CORPORATION4650 CUSHING PARKWAY FREMONT CA 94538

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hoang, John Fremont, US 21 284
Lill, Thorsten Santa Clara, US 101 3753
Shen, Meihua Fremont, US 71 2612
Yang, Jialing Fremont, US 10 382
Zhou, Baosuo Redwood City, US 38 2111

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