Methods for perforating two-dimensional materials using a broad ion field

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United States of America Patent

PATENT NO 9870895
SERIAL NO

14610770

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Abstract

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Perforating graphene and other two-dimensional materials with holes inclusively having a desired size range, a narrow size distribution, and a high hole density can be difficult to achieve. A layer in continuous contact with graphene, graphene-based materials and other two-dimensional materials can help promote hole formation. Processes for perforating a two-dimensional material can include exposing to an ion source a two-dimensional material in continuous contact with at least one layer, and interacting a plurality of ions from the ion source with the two-dimensional material and with the at least one layer. The ion source may be a broad ion beam.

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Patent Owner(s)

Patent OwnerAddress
LOCKHEED MARTIN CORPORATION6801 ROCKLEDGE DRIVE BETHSEDA MD 20817

International Classification(s)

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  • 2015 Application Filing Year
  • H01J Class
  • 2290 Applications Filed
  • 1843 Patents Issued To-Date
  • 80.49 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20152016201720182019202020212022202320240255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bedworth, Peter V Los Gatos, US 41 1187

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  • 15 Citation Count
  • H01J Class
  • 91.44 % this patent is cited more than
  • 7 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges79715421524116522101 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 70100 +010020030040050060070080090010001100120013001400150016001700

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