Methods for perforating two-dimensional materials using a broad ion field
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United States of America Patent
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Jan 16, 2018
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app pub date -
Jan 30, 2015
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Jan 31, 2014
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Abstract
Perforating graphene and other two-dimensional materials with holes inclusively having a desired size range, a narrow size distribution, and a high hole density can be difficult to achieve. A layer in continuous contact with graphene, graphene-based materials and other two-dimensional materials can help promote hole formation. Processes for perforating a two-dimensional material can include exposing to an ion source a two-dimensional material in continuous contact with at least one layer, and interacting a plurality of ions from the ion source with the two-dimensional material and with the at least one layer. The ion source may be a broad ion beam.
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