Memory repairing method and memory device applying the same

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United States of America Patent

PATENT NO 9870835
SERIAL NO

14637476

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Abstract

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A memory repairing method and a memory device applying the same are disclosed, wherein the method comprises steps as follows: A memory device comprising at least one page having a plurality of cell strings is firstly provided. A regular data pattern is then provided to block at least two of the plurality of cell strings, and the blocked cells strings are marked as inaccessible.

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Patent Owner(s)

Patent OwnerAddress
MACRONIX INTERNATIONAL CO LTDNO 16 LI-HSIN RD SCIENCE-BASED INDUSTRIAL PARK HSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Shih-Hung Hsinchu County, TW 175 4671

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