Error characterization and mitigation for 16nm MLC NAND flash memory under total ionizing dose effect
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United States of America Patent
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Jan 16, 2018
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N/A
app pub date -
Oct 19, 2016
filing date -
Oct 19, 2015
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Abstract
A data device includes a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme that is optional and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count.
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