Nonvolatile memory device including page buffer and method for verifying program operation thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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Jan 16, 2018
Issued Date -
N/A
app pub date -
Feb 6, 2017
filing date -
Mar 23, 2016
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A nonvolatile memory device may include a cell array, a first page buffer, and a second page buffer. The first page buffer may be connected to a first memory cell of the cell array and may store first sensing data generated by sensing whether a program operation of the first memory cell is completed during a program verify operation. The second page buffer may be connected to a second memory cell of the cell array. During the program verify operation, the second page buffer may generate and store first verify data based on second sensing data generated by sensing whether a program operation of the second memory cell is completed, may receive the first sensing data from the first page buffer, and may store second verify data generated by accumulating the first sensing data and the first verify data.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
SAMSUNG ELECTRONICS CO LTD | 129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Lim, Bongsoon | Seoul, KR | 46 | 129 |
# of filed Patents : 46 Total Citations : 129 | |||
Shim, Sang-Won | Seoul, KR | 31 | 301 |
# of filed Patents : 31 Total Citations : 301 | |||
Yoon, Seokmin | Seoul, KR | 3 | 10 |
# of filed Patents : 3 Total Citations : 10 |
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Patent Citation Ranking
- 4 Citation Count
- G06F Class
- 20.77 % this patent is cited more than
- 7 Age
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