Nonvolatile memory device including page buffer and method for verifying program operation thereof

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United States of America Patent

PATENT NO 9870833
SERIAL NO

15425557

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Abstract

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A nonvolatile memory device may include a cell array, a first page buffer, and a second page buffer. The first page buffer may be connected to a first memory cell of the cell array and may store first sensing data generated by sensing whether a program operation of the first memory cell is completed during a program verify operation. The second page buffer may be connected to a second memory cell of the cell array. During the program verify operation, the second page buffer may generate and store first verify data based on second sensing data generated by sensing whether a program operation of the second memory cell is completed, may receive the first sensing data from the first page buffer, and may store second verify data generated by accumulating the first sensing data and the first verify data.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lim, Bongsoon Seoul, KR 46 129
Shim, Sang-Won Seoul, KR 31 301
Yoon, Seokmin Seoul, KR 3 10

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Patent Citation Ranking

  • 4 Citation Count
  • G06F Class
  • 20.77 % this patent is cited more than
  • 7 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges785123150394313806693311801076047295401 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +02000400060008000100001200014000160001800020000220002400026000

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