Non-volatile semiconductor memory and erasing method thereof

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United States of America Patent

PATENT NO 9870828
SERIAL NO

15277992

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Abstract

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An erasing method of a nonvolatile semiconductor memory device of the disclosure includes erasing data of a selected memory cell (step S100); immediately applying a programming voltage lower than a programming voltage in a programming time to all control gates of the selected memory cell after the erasing step, thereby performing a week programming (step S110); performing a erasing verification of the selected memory cell (step S120).

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Patent Owner(s)

Patent OwnerAddress
WINBOND ELECTRONICS CORPNO 8 KEYA 1ST RD DAYA DISTRICT CENTRAL TAIWAN SCIENCE PARK TAICHUNG CITY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Shirota, Riichiro Taichung, TW 208 7211
Suito, Katsutoshi Taichung, TW 12 143

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