Nonvolatile memory device and method of programming the same
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United States of America Patent
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Jan 16, 2018
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app pub date -
Jun 8, 2015
filing date -
Sep 2, 2014
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Abstract
A nonvolatile memory device includes a memory cell array, an address decoder, a read & write circuit and control logic. The memory cell array includes a plurality of memory blocks including a plurality of cell strings, each cell string including a plurality of memory cells stacked in a direction perpendicular to a substrate. The control logic controls operations so that in a program operation, when the selected word line satisfies a precharge condition, a program voltage to be applied to the selected word line is applied before a pass voltage to be applied to an unselected word line.
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