Semiconductor device and method of manufacturing the same
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United States of America Patent
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Jan 16, 2018
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app pub date -
Apr 18, 2016
filing date -
Feb 22, 2000
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Abstract
The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode (167) is arranged so as to partially overlap a source wiring (137) for shielding the gap between pixels from light, and a thin film transistor is arranged so as to partially overlap a gate wiring (166) for shielding a channel region of the thin film transistor from light, thereby realizing a high pixel aperture ratio.
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