Liquid crystal display device and method of manufacturing the same
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United States of America Patent
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Jan 16, 2018
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app pub date -
Jul 15, 2015
filing date -
Dec 10, 2012
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Abstract
A thin-film transistor includes a gate electrode made of metal, a light transmissive gate insulating film that covers the gate electrode, a semiconductor film that overlaps with the gate electrode through the gate insulating film, and a source electrode and a drain electrode, made of metal, and spaced from each other. The gate electrode and the semiconductor film have respective through-holes communicated with each other so that the gate insulating film enters an inside of the through-holes. The gate insulating film has an area of the inside of the through-holes of the gate electrode and the semiconductor film. The source electrode and the drain electrode pass through the inside of the through-holes of the gate electrode and the semiconductor film so as to overlap with a part of the area of the inside of the through-hole of the gate insulating film and avoid a remaining portion thereof.
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