Through-silicon via (TSV) crack sensors for detecting TSV cracks in three-dimensional (3D) integrated circuits (ICs) (3DICs), and related methods and systems
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United States of America Patent
Stats
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Jan 16, 2018
Issued Date -
N/A
app pub date -
Mar 5, 2015
filing date -
Mar 5, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Through-silicon via (TSV) crack sensors for detecting TSV cracks in three-dimensional (3D) integrated circuits (ICs) (3DICs), and related methods and systems are disclosed. In one aspect, a TSV crack sensor circuit is provided in which doped rings for a plurality of TSVs are interconnected in parallel such that all interconnected TSV doped rings may be tested at the same time by providing a single current into the contacts of the interconnected doped rings. In another aspect, a TSV crack sensor circuit is provided including one or more redundant TSVs. Each doped ring for a corresponding TSV is tested independently, and a defective TSV may be replaced with a spare TSV whose doped ring is not detected to be cracked. This circuit allows for correction of a compromised 3DIC by replacing possibly compromised TSVs with spare TSVs.
First Claim
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Family
International Classification(s)
- 2015 Application Filing Year
- H01L Class
- 25498 Applications Filed
- 22451 Patents Issued To-Date
- 88.06 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 2 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
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