Method for evaluating performance of plasma wave transistor
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United States of America Patent
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Jan 16, 2018
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app pub date -
May 7, 2014
filing date -
Feb 24, 2014
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Abstract
A method for evaluating the performance of a plasma transistor comprises: setting a plasma wave velocity, which is adjusted by a gate overdrive voltage, as a first axis; setting an electronic drift velocity, which is adjusted by a drain-to-source voltage, as a second axis; setting a channel length as a third axis; and checking whether the plasma wave transistor is operated as a terahertz emitter according to a change in the performance parameter value of the plasma wave transistor on the basis of a relational expression among the first axis, the second axis, and the third axis.
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