Silicon single crystal pulling apparatus comprising a vertically movable supporting member holding the heater and shield
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United States of America Patent
Stats
-
Jan 16, 2018
Grant Date -
Jul 7, 2016
app pub date -
Sep 1, 2014
filing date -
Oct 29, 2013
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention is a silicon single crystal pulling apparatus based on Czochralski method, including a crucible for receiving a raw material, a heater for heating the raw material into a raw material melt, a main chamber accommodating the crucible and the heater, a shield disposed between the heater and the main chamber for shielding a radiant heat from the heater, and a supporting member holding the heater and the shield from below, the supporting member being movable vertically whereby the heater and the shield can move vertically together. As a result, there is provided a silicon single crystal pulling apparatus that facilitates the adjustment of thermal history, the improvement of pulling rate of a silicon single crystal, and the reduction in oxygen concentration.
First Claim
Other Claims data not available
Family
International Classification(s)
- 2014 Application Filing Year
- C30B Class
- 469 Applications Filed
- 402 Patents Issued To-Date
- 85.72 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- C30B Class
- 0 % this patent is cited more than
- 7 Age
Maintenance Fees
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