Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate

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United States of America Patent

PATENT NO 9869033
SERIAL NO

14619237

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Abstract

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A crystal has a diameter of 1 cm or more and shows a strongest peak in cathode luminescent spectrum at a wavelength of 360 nm in correspondence to a band edge.

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Patent Owner(s)

Patent OwnerAddress
RICOH COMPANY LTD3-6 NAKAMAGOME 1-CHOME OHTA-KU TOKYO 143-8555

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iwata, Hirokazu Miyagi, JP 59 754
Sarayama, Seiji Miyagi, JP 54 542
Shimada, Masahiko Miyagi, JP 81 454
Yamane, Hisanori Miyagi, JP 26 438

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