side inject to improve process uniformity for low temperature oxidation process
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United States of America Patent
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Jan 16, 2018
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app pub date -
Jul 8, 2015
filing date -
Jul 10, 2014
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Abstract
A method for forming an oxide layer having improved thickness uniformity on a substrate is disclosed. The method includes heating a substrate disposed in a processing chamber to a temperature less than about 700 degrees Celsius, flowing a first gas mixture into the processing chamber from a first gas inlet, and flowing a second gas mixture into the processing chamber from a second gas inlet. The composition and flow rate of the second gas mixture, and the composition and flow rate of the first gas mixture are controlled so the oxide layer formed on the substrate has improved thickness uniformity.
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