Composite device and switching power supply
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United States of America Patent
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Jan 9, 2018
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app pub date -
Apr 16, 2015
filing date -
Apr 18, 2014
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Abstract
This invention provides a composite device and a switching power supply. The composite device integrates therein a first enhancement-mode MOS device and a depletion-mode MOS device, and comprises: an epitaxial region of a first doping type; a first well region and a second well region formed in parallel on the front side of the epitaxial region; a first doped region of the first doping type formed within the first well region; a gate of the first enhancement-mode MOS device; a second doped region of the first doping type formed within the second well region; a channel region of the first doping type, wherein the channel region extends from a boundary of the second well region to a boundary of the second doped region; and a gate of the depletion-mode MOS device. The switching power supply includes the composite device above. This invention can decrease the process complexity, reduce the chip area and cost, and may be applicable to high power scenarios.
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