Rotated field effect transistor topology amplifier
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United States of America Patent
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Jan 9, 2018
Issued Date -
N/A
app pub date -
Jul 22, 2016
filing date -
Jul 22, 2016
priority date (Note) -
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Abstract
An apparatus includes multiple field effect transistors and multiple wires. An input wire may be configured to transfer an input signal along an axis. The field effect transistors may be configured to generate a pair of intermediate signals by amplifying the input signal. Multiple gates of the field effect transistors may be configured to receive the input signal. A topology of the gates may be rotated to be perpendicular to the axis. The field effect transistors may be located in two rows mirrored about the axis. Intermediate wires may be configured to transfer the intermediate signals parallel to the axis. A collection wire may be configured to transfer the intermediate signals toward each other and generate an output signal by combining the intermediate signals. An output wire may be configured to transfer the output signal parallel to the axis and away from the field effect transistors.
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