Bromine containing silicon precursors for encapsulation layers
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United States of America Patent
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Jan 9, 2018
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app pub date -
Sep 21, 2016
filing date -
Sep 24, 2015
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Abstract
Methods of depositing silicon nitride encapsulation layers by atomic layer deposition over memory devices including chalcogenide material are provided herein. Methods include using iodine-containing and/or bromine-containing silicon precursors and depositing thermally using ammonia or hydrazine as a second reactant, or iodine-containing and/or bromine-containing silicon precursors and depositing using a nitrogen-based or hydrogen-based plasma.
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