Nonvolatile resistance change element
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United States of America Patent
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Jan 9, 2018
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N/A
app pub date -
Aug 15, 2013
filing date -
Jul 21, 2011
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Abstract
According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode and a first layer. The first electrode includes a metal element. The second electrode includes an n-type semiconductor. The first layer is formed between the first electrode and the second electrode and includes a semiconductor element. The first layer includes a conductor portion made of the metal element. The conductor portion and the second electrode are spaced apart.
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