Electronic device and method for fabricating the same
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United States of America Patent
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Jan 9, 2018
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N/A
app pub date -
Aug 15, 2016
filing date -
Nov 30, 2015
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Abstract
Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a free layer comprising CoFeGeB alloy, and having a changeable magnetization direction that is perpendicular to the free layer; a tunnel barrier layer positioned over the free layer, and configured for enabling electron tunneling; a pinned layer positioned over the tunnel barrier layer, and having a pinned magnetization direction that is perpendicular to the pinned layer; and a bottom layer positioned under the free layer, and having a B2 structure to improve a perpendicular magnetic crystalline anisotropy of the free layer.
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