Magnetic memory devices
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United States of America Patent
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Jan 9, 2018
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app pub date -
Jan 12, 2017
filing date -
Jan 22, 2015
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Abstract
Magnetic memory devices are provided. A magnetic memory device includes a Magnetic Tunnel Junction (MTJ) structure on a contact. Moreover, the magnetic memory device includes an insulating structure and an electrode between the MTJ structure and the contact. In some embodiments, a first contact area of the electrode with the MTJ structure is smaller than a second contact area of the insulating structure with the MTJ structure.
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