Electronic device
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United States of America Patent
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Jan 9, 2018
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N/A
app pub date -
Oct 20, 2016
filing date -
Dec 30, 2015
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Abstract
Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a pinned layer having a pinned magnetization direction; a free layer having a changeable magnetization direction; a tunnel barrier layer interposed between the pinned layer and the free layer, and including a metal oxide; and a carbon-based compound patch positioned at one or more of between the pinned layer and the tunnel barrier layer, between the free layer and the tunnel barrier layer, and in the tunnel barrier layer.
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