Semicondcutor light-emitting device and fabricating method thereof

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United States of America Patent

PATENT NO 9865777
SERIAL NO

15336797

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Abstract

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A semiconductor light-emitting device including a light-emitting diode chip and an electrode disposed thereon is provided. The electrode at least includes a plated silver alloy (Ag1-xYx) layer, wherein the Y of the Ag1-xYx layer includes metals forming a complete solid solution with Ag at arbitrary weight percentage, and the X of the Ag1-xYx layer is in a range from about 0.02 to 0.15. The fabricating method thereof is also provided.

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Patent Owner(s)

Patent OwnerAddress
CHIPMOS TECHNOLOGIES INCHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsu, Tzu-Han Hsinchu, TW 12 48
Lu, Tung-Bao Hsinchu, TW 3 1

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