Semiconductor light emitting element and method for manufacturing the same
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United States of America Patent
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Jan 9, 2018
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N/A
app pub date -
Jan 13, 2016
filing date -
Jul 17, 2013
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Abstract
According to one embodiment, a light emitting element includes n-type and p-type semiconductor layers and a light emitting unit. The light emitting unit is provided between the n-type semiconductor layer and the p-type semiconductor layer, the light emitting unit emits light with a peak wavelength of not less than 530 nm. The light emitting unit includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer provided between the n-side barrier layer and the p-type semiconductor layer, a first well layer contacting the n-side barrier layer between the n-side barrier layer and the first barrier layer, a first AlGaN layer provided between the first well layer and the first barrier layer and including Alx1Ga1-x1N (0.15≦x1≦1), and a first p-side InGaN layer provided between the first AlGaN layer and the first barrier layer and including Inya1Ga1-ya1N (0
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