Hole collectors for silicon photovoltaic cells
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United States of America Patent
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Jan 9, 2018
Issued Date -
N/A
app pub date -
Oct 10, 2013
filing date -
Oct 10, 2012
priority date (Note) -
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Abstract
One embodiment of the present invention provides a solar cell. The solar cell includes a base layer comprising crystalline Si (c-Si), a hole collector situated on a first side of the base layer, and an electron collector situated on a second side of the base layer, which is opposite the first side. The hole collector includes a quantum-tunneling-barrier (QTB) layer situated adjacent to the base layer and a transparent conducting oxide (TCO) layer situated adjacent to the QTB layer. The TCO layer has a work function of at least 5.0 eV.
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