Schottky diode

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United States of America Patent

PATENT NO 9865750
SERIAL NO

14810678

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the drift layer. The metal for the Schottky layer and the semiconductor material for the drift layer are selected to provide a low barrier height Schottky junction between the drift layer and the Schottky layer.

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Patent Owner(s)

  • CREE, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Agarwal, Anant Kumar Arlington, US 18 127
Allen, Scott Apex, US 58 1513
Henning, Jason Patrick Carrboro, US 14 210
Palmour, John Williams Cary, US 36 1243
Ryu, Sei-Hyung Cary, US 131 1918
Zhang, Qingchun Cary, US 98 1807

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