Semiconductor device including oxide layer surrounding oxide semiconductor layer
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United States of America Patent
Stats
-
Jan 9, 2018
Issued Date -
N/A
app pub date -
Oct 15, 2013
filing date -
Oct 24, 2012
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
Oxygen is likely to be released or an oxygen vacancy is likely to occur during a manufacturing process particularly at a side surface of an oxide semiconductor layer. When an oxygen vacancy occurs at the side surface of the oxide semiconductor layer, a problem arises in that the resistance of the side surface is reduced, the apparent threshold voltage of a transistor varies, and variation in the threshold voltage is increased. Further, the variation in the threshold voltage may cause unintentional current to flow between a source and a drain, which might lead to an increase in the off-state current of the transistor and deterioration in the electric characteristics of the transistor. A semiconductor device in which a multilayer film including an oxide semiconductor layer and an oxide layer surrounding the oxide semiconductor layer is used for a channel formation region is provided.
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Cited Art Landscape
Patent Citation Ranking
- 5 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
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