Formation of FinFET junction

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United States of America Patent

PATENT NO 9865737
SERIAL NO

15166665

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Abstract

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A finFET structure, and method of forming such structure, in which a germanium enriched nanowire is located in the channel region of the FET, while simultaneously having silicon-germanium fin in the source/drain region of the finFET.

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Patent Owner(s)

Patent OwnerAddress
INTERNATIONAL BUSINESS MACHINES CORPORATIONNEW ORCHARD ROAD ARMONK NY 10504

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chan, Kevin K Staten Island, US 230 4176
Hashemi, Pouya White Plains, US 602 5206
Khakifirooz, Ali Los Altos, US 843 12822
Ott, John A Greenwood Lake, US 78 1135
Reznicek, Alexander Troy, US 1451 12717

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